TK65G10N1,RQ
- Manufacturer Toshiba
- Part Number TK65G10N1,RQ
- Description MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
- Category MOSFET
Specifications
| Package | D2PAK-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 4.5 mm |
| Qg - Gate Charge | 81 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 26 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 136 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 4.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 85 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK65G10N1 |
| Height | 10.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 44 ns |
| Pd - Power Dissipation | 156 W |
| Rise Time | 19 ns |
| Technology | Si |
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