TK50E10K3(S1SS-Q)
- Manufacturer Toshiba
- Part Number TK50E10K3(S1SS-Q)
- Description MOSFET N-Ch MOS 50A 100V 25W 410pF 0.092
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 4.45 mm |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 50 A |
| Length | 10.16 mm |
| Rds On - Drain-Source Resistance | 92 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | TK50E10K3 |
| Height | 15.1 mm |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 25 W |
| Technology | Si |
Need pricing on TK50E10K3(S1SS-Q)?
Tell us your quantity and target price. We reply the same business day.