TK4P60DB(T6RSS-Q)
- Manufacturer Toshiba
- Part Number TK4P60DB(T6RSS-Q)
- Description MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 5.5 mm |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | MOSVII |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 3.7 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 2 Ohms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | TK4P60DB |
| Height | 2.3 mm |
| Packaging | |
| Pd - Power Dissipation | 80 W |
| Technology | Si |
Need pricing on TK4P60DB(T6RSS-Q)?
Tell us your quantity and target price. We reply the same business day.