TK4A60DA(STA4,Q,M)
- Manufacturer Toshiba
- Part Number TK4A60DA(STA4,Q,M)
- Description MOSFET N-ch 600V 3.5A TO-220SIS
- Category MOSFET
Specifications
| Package | TO-220FP-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.4 V |
| Width | 4.5 mm |
| Qg - Gate Charge | 11 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 8 ns |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | MOSVII |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 0.6 S |
| Id - Continuous Drain Current | 3.5 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK4A60DA |
| Height | 15 mm |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 35 W |
| Rise Time | 18 ns |
| Technology | Si |
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