TK49N65W,S1F(S
- Manufacturer Toshiba
- Part Number TK49N65W,S1F(S
- Description MOSFET Power MOSFET 49.2A 400W 650V
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 160 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 10 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | DTMOSIV |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 49.2 A |
| Rds On - Drain-Source Resistance | 55 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 270 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK49N65W |
| Typical Turn-On Delay Time | 130 ns |
| Pd - Power Dissipation | 400 W |
| Rise Time | 70 ns |
| Technology | Si |
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