TK2R9E10PL,S1X
- Manufacturer Toshiba
- Part Number TK2R9E10PL,S1X
- Description MOSFET Power MOSFET ID=240A VDSS=100V
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 83 nC, 161 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 46 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSIX-H |
| Product Type | MOSFET |
| Id - Continuous Drain Current | 240 A |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| RoHS | Y |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK2R9E10PL |
| Pd - Power Dissipation | 306 W |
| Rise Time | 22 ns |
| Technology | Si |
Need pricing on TK2R9E10PL,S1X?
Tell us your quantity and target price. We reply the same business day.