TK2P90E,RQS
- Manufacturer Toshiba
- Part Number TK2P90E,RQS
- Description MOSFET N-Ch TT-MOSVIII 900V 80W 500pF 2A
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 5.5 mm |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 22 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | MOSVIII |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 2 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 4.7 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 70 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK2P90E |
| Height | 2.3 mm |
| Packaging | |
| Typical Turn-On Delay Time | 50 ns |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 80 W |
| Rise Time | 25 ns |
| Technology | Si |
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