TK25N60X,S1F
- Manufacturer Toshiba
- Part Number TK25N60X,S1F
- Description MOSFET Power MOSFET N-Channel
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Width | 5.02 mm |
| Qg - Gate Charge | 40 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 4 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | DTMOSIV-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 25 A |
| Length | 15.94 mm |
| Rds On - Drain-Source Resistance | 105 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 90 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK25N60X |
| Height | 20.95 mm |
| Typical Turn-On Delay Time | 45 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 180 W |
| Rise Time | 15 ns |
| Technology | Si |
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