TK22V65X5,LQ
- Manufacturer Toshiba
- Part Number TK22V65X5,LQ
- Description MOSFET PWR MOSFET PD=180W F=1MHZ
- Category MOSFET
Specifications
| Package | DFN8x8-5 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 50 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | DTMOSIV-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 22 A |
| Rds On - Drain-Source Resistance | 170 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 80 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK22V65X5 |
| Packaging | |
| Typical Turn-On Delay Time | 55 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 180 W |
| Rise Time | 20 ns |
| Technology | Si |
Need pricing on TK22V65X5,LQ?
Tell us your quantity and target price. We reply the same business day.