TK100E06N1,S1X
- Manufacturer Toshiba
- Part Number TK100E06N1,S1X
- Description MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Width | 4.45 mm |
| Vgs - Gate-Source Voltage | 10 V |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1 mA |
| Length | 10.16 mm |
| Rds On - Drain-Source Resistance | 1.9 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | TK100E06N1 |
| Height | 15.1 mm |
| Mounting Style | Through Hole |
| Technology | Si |
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