TJ9A10M3,S4Q
- Manufacturer Toshiba
- Part Number TJ9A10M3,S4Q
- Description MOSFET PWR MOSFET PD=19W F=1MHZ
- Category MOSFET
Specifications
| Package | TO-220SIS-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 2 V |
| Qg - Gate Charge | 47 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 32 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVI |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 12 S |
| Id - Continuous Drain Current | 9 A |
| Rds On - Drain-Source Resistance | 170 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 195 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TJ9A10M3 |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 19 W |
| Rise Time | 12 ns |
| Technology | Si |
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