TJ8S06M3L(T6L1,NQ)
- Manufacturer Toshiba
- Part Number TJ8S06M3L(T6L1,NQ)
- Description MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 5.5 mm |
| Qg - Gate Charge | 19 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 34 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVI |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 8 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 104 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 140 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TJ8S06M3L |
| Height | 2.3 mm |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Pd - Power Dissipation | 27 W |
| Rise Time | 6 ns |
| Technology | Si |
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