TGF3015-SM
- Manufacturer Qorvo
- Part Number TGF3015-SM
- Description RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN
- Category RF JFET Transistors
Specifications
| Package | QFN-EP-16 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Transistor Polarity | N-Channel |
| Development Kit | TGF3015-SM-EVB1 |
| Moisture Sensitive | Yes |
| Part # Aliases | 1120419 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Brand | Qorvo |
| Gain | 17.1 dB |
| Product Type | RF JFET Transistors |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 557 mA |
| Output Power | 11 W |
| Operating Frequency | 0.03 GHz to 3 GHz |
| RoHS | Y |
| Configuration | Single |
| Subcategory | Transistors |
| Pd - Power Dissipation | 15.3 W |
| Technology | GaN SiC |
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