TGF2977-SM
- Manufacturer Qorvo
- Part Number TGF2977-SM
- Description RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
- Category RF JFET Transistors
Specifications
| Package | QFN-16 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Transistor Polarity | N-Channel |
| Development Kit | TGF2977-SMEVB1 |
| Width | 3 mm |
| Moisture Sensitive | Yes |
| Part # Aliases | 1127257 |
| Type | GaN SiC HEMT |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Brand | Qorvo |
| Unit Weight | 0.002014 oz |
| Number of Channels | 1 Channel |
| Gain | 13 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 225 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 326 mA |
| Length | 3 mm |
| Output Power | 6 W |
| Operating Frequency | DC to 12 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Height | 0.203 mm |
| Pd - Power Dissipation | 8.4 W |
| Technology | GaN SiC |
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