TGF2965-SM
- Manufacturer Qorvo
- Part Number TGF2965-SM
- Description RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
- Category RF JFET Transistors
Specifications
| Package | QFN-16 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | - |
| Moisture Sensitive | Yes |
| Part # Aliases | 1123170 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 2.7 V |
| Maximum Drain Gate Voltage | - |
| Brand | Qorvo |
| Unit Weight | 0.002014 oz |
| Gain | 18 dB |
| Configuration | Single |
| Maximum Operating Temperature | - |
| Transistor Type | HEMT |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 600 mA |
| Output Power | 6 W |
| Rds On - Drain-Source Resistance | - |
| Operating Frequency | 30 MHz to 3 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Gate-Source Cutoff Voltage | - |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 7.5 W |
| Technology | GaN SiC |
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