TGF2819-FS
- Manufacturer Qorvo
- Part Number TGF2819-FS
- Description RF JFET Transistors DC-3.5GHz 32V GaN PAE 58% at 3.3GHz
- Category RF JFET Transistors
Specifications
| Packaging | Tray |
| Min. Pack | 25 |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Transistor Polarity | N-Channel |
| Development Kit | TGF2819-FS/FL, EVAL BOARD |
| Moisture Sensitive | Yes |
| Part # Aliases | 1118705 772-TGF2819-FS-EVB1 |
| Type | GaN SiC HEMT |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 2.9 V |
| Maximum Drain Gate Voltage | 145 V |
| Brand | Qorvo |
| Shipping Restrictions | |
| Gain | 14 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 7.32 A |
| Output Power | 100 W |
| Operating Frequency | 3.5 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 86 W |
| Technology | GaN SiC |
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