TGF2160
- Manufacturer Qorvo
- Part Number TGF2160
- Description RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
- Category RF JFET Transistors
Specifications
| Packaging | Gel Pack |
| Min. Pack | 100 |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Part # Aliases | 1098617 |
| Type | GaAs pHEMT |
| Mounting Style | SMD/SMT |
| Product | RF JFET |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 7 V |
| Brand | Qorvo |
| Number of Channels | 2 Channel |
| Gain | 10.4 dB |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | pHEMT |
| P1dB - Compression Point | 32.5 dBm |
| Operating Temperature Range | - 65 C to + 150 C |
| Forward Transconductance - Min | 619 mS |
| Id - Continuous Drain Current | 517 mA |
| Operating Frequency | 20 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 5.6 W |
| Technology | GaAs |
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