TGF2025
- Manufacturer Qorvo
- Part Number TGF2025
- Description RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
- Category RF JFET Transistors
Specifications
| Packaging | Gel Pack |
| Min. Pack | 100 |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Part # Aliases | 1098611 |
| Type | GaAs pHEMT |
| Mounting Style | SMD/SMT |
| Product | RF JFET |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 15 V |
| Maximum Drain Gate Voltage | 12 V |
| Brand | Qorvo |
| Gain | 14 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | pHEMT |
| P1dB - Compression Point | 24 dBm |
| Operating Temperature Range | - 65 C to + 150 C |
| Forward Transconductance - Min | 97 mS |
| Id - Continuous Drain Current | 81 mA |
| Operating Frequency | 20 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | TGF |
| NF - Noise Figure | 0.9 dB |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 890 mW |
| Technology | GaAs |
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