TGF2018
- Manufacturer Qorvo
- Part Number TGF2018
- Description RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
- Category RF JFET Transistors
Specifications
| Packaging | Gel Pack |
| Min. Pack | 100 |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Part # Aliases | 1098412 |
| Type | GaAs pHEMT |
| Mounting Style | SMD/SMT |
| Product | RF JFET |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 15 V |
| Maximum Drain Gate Voltage | 12 V |
| Brand | Qorvo |
| Gain | 14 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | pHEMT |
| P1dB - Compression Point | 22 dBm |
| Operating Temperature Range | - 65 C to + 150 C |
| Forward Transconductance - Min | 70 mS |
| Id - Continuous Drain Current | 58 mA |
| Operating Frequency | 20 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | TGF |
| NF - Noise Figure | 1 dB |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 640 mW |
| Technology | GaAs |
Need pricing on TGF2018?
Tell us your quantity and target price. We reply the same business day.