T2G6000528-Q3
- Manufacturer Qorvo
- Part Number T2G6000528-Q3
- Description RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
- Category RF JFET Transistors
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - |
| Transistor Polarity | N-Channel |
| Development Kit | T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5 |
| Application | Military Radar, Professional and Military Radio Communications |
| Moisture Sensitive | Yes |
| Part # Aliases | 1099997 |
| Mounting Style | SMD/SMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - |
| Maximum Drain Gate Voltage | - |
| Brand | Qorvo |
| Gain | 15 dB |
| Configuration | Single |
| Maximum Operating Temperature | - |
| Transistor Type | HEMT |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 650 mA |
| Output Power | 10 W |
| Operating Frequency | DC to 6 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | T2G |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 12.5 W |
| Technology | GaN SiC |
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