T1G4012036-FL
- Manufacturer Qorvo
- Part Number T1G4012036-FL
- Description RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
- Category RF JFET Transistors
Specifications
| Packaging | Tray |
| Min. Pack | 25 |
| Vds - Drain-Source Breakdown Voltage | 36 V |
| Transistor Polarity | N-Channel |
| Moisture Sensitive | Yes |
| Part # Aliases | 1096176 |
| Type | GaN SiC HEMT |
| Mounting Style | SMD/SMT |
| Product | GaN RF Power Transistors |
| Product Category | RF JFET Transistors |
| Maximum Drain Gate Voltage | - 2.9 V |
| Brand | Qorvo |
| Shipping Restrictions | |
| Gain | 18.4 dB |
| Product Type | RF JFET Transistors |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 12 A |
| Output Power | 24 W |
| Operating Frequency | 3.3 GHz |
| RoHS | Y |
| Subcategory | Transistors |
| Series | T1G |
| Pd - Power Dissipation | 117 W |
| Technology | GaN SiC |
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