T1G2028536-FL
- Manufacturer Qorvo
- Part Number T1G2028536-FL
- Description RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
- Category RF JFET Transistors
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 36 V |
| Transistor Polarity | N-Channel |
| Moisture Sensitive | Yes |
| Part # Aliases | 1111394 |
| Type | GaN SiC HEMT |
| Mounting Style | SMD/SMT |
| Product | RF Power Transistor |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 145 V |
| Maximum Drain Gate Voltage | 48 V |
| Brand | Qorvo |
| Gain | 20.8 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 275 C |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 24 A |
| Output Power | 260 W |
| Operating Frequency | 2 GHz |
| RoHS | Y |
| Product Type | RF JFET Transistors |
| Subcategory | Transistors |
| Series | T1G |
| Pd - Power Dissipation | 288 W |
| Technology | GaN SiC |
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