SUD40N10-25-E3
- Manufacturer Vishay / Siliconix
- Part Number SUD40N10-25-E3
- Description MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 40 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 80 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Vishay / Siliconix |
| Unit Weight | 0.050717 oz |
| Number of Channels | 1 Channel |
| Tradename | TrenchFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 70 S |
| Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 25 mOhms |
| RoHS | E |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | SUD |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 136 W |
| Rise Time | 40 ns |
| Technology | Si |
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