STWA70N60DM2
- Manufacturer STMicroelectronics
- Part Number STWA70N60DM2
- Description MOSFET
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 120 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 10.4 ns |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 66 A |
| Rds On - Drain-Source Resistance | 37 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 112 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STWA70N60DM2 |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 446 W |
| Rise Time | 67 ns |
| Technology | Si |
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