STW56N60M2
- Manufacturer STMicroelectronics
- Part Number STW56N60M2
- Description MOSFET N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 91 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 14 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel Power MOSFET |
| Id - Continuous Drain Current | 52 A |
| Rds On - Drain-Source Resistance | 55 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 119 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STW56N60M2 |
| Typical Turn-On Delay Time | 18 ns |
| Pd - Power Dissipation | 350 W |
| Rise Time | 26.5 ns |
| Technology | Si |
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