STW32NM50N
- Manufacturer STMicroelectronics
- Part Number STW32NM50N
- Description MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 62.5 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 23.6 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 13.86 A |
| Rds On - Drain-Source Resistance | 130 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 110 ns |
| Subcategory | MOSFETs |
| Series | STW32NM50N |
| Typical Turn-On Delay Time | 21.5 ns |
| Pd - Power Dissipation | 190 W |
| Rise Time | 9.5 ns |
| Technology | Si |
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