STW25NM60ND
- Manufacturer STMicroelectronics
- Part Number STW25NM60ND
- Description MOSFET N-channel 600V, 21A FDMesh II
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Width | 5.15 mm |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 40 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 21 A |
| Length | 15.75 mm |
| Rds On - Drain-Source Resistance | 160 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STB25NM60N |
| Height | 20.15 mm |
| Typical Turn-On Delay Time | 60 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 160 W |
| Rise Time | 30 ns |
| Technology | Si |
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