STW20N65M5
- Manufacturer STMicroelectronics
- Part Number STW20N65M5
- Description MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 36 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 7.5 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance | 190 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | STW20N65M5 |
| Pd - Power Dissipation | 130 W |
| Rise Time | 7.5 ns |
| Technology | Si |
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