STW19NM60N
- Manufacturer STMicroelectronics
- Part Number STW19NM60N
- Description MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 600 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 260 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 35 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 25 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 13 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STW19NM60N |
| Typical Turn-On Delay Time | 12 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 15 ns |
| Technology | Si |
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