STW11NM80
- Manufacturer STMicroelectronics
- Part Number STW11NM80
- Description MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Width | 5.15 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Type | MOSFET |
| Fall Time | 15 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current | 11 A |
| Length | 15.75 mm |
| Rds On - Drain-Source Resistance | 400 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 46 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STW11NM80 |
| Height | 20.15 mm |
| Typical Turn-On Delay Time | 22 ns |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 17 ns |
| Technology | Si |
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