STW11NK100Z
- Manufacturer STMicroelectronics
- Part Number STW11NK100Z
- Description MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 5.15 mm |
| Qg - Gate Charge | 113 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Type | MOSFET |
| Fall Time | 55 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Tradename | SuperMESH |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel Power MOSFET |
| Forward Transconductance - Min | 9 S |
| Id - Continuous Drain Current | 8.3 A |
| Length | 15.75 mm |
| Rds On - Drain-Source Resistance | 1.38 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 98 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STW11NK100Z |
| Height | 20.15 mm |
| Typical Turn-On Delay Time | 27 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 230 W |
| Rise Time | 18 ns |
| Technology | Si |
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