STU6N65M2
- Manufacturer STMicroelectronics
- Part Number STU6N65M2
- Description MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
- Category MOSFET
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 9.8 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 20 ns |
| Mounting Style | Through Hole |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Tradename | MDmesh |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 1.35 Ohms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 6.5 ns |
| Subcategory | MOSFETs |
| Series | STU6N65M2 |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 60 W |
| Rise Time | 7 ns |
| Technology | Si |
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