STP27N60M2-EP
- Manufacturer STMicroelectronics
- Part Number STP27N60M2-EP
- Description MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 33 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 6.3 ns |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 163 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STP27N60M2-EP |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 13.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 170 W |
| Rise Time | 8.1 ns |
| Technology | Si |
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