STP16N60M2
- Manufacturer STMicroelectronics
- Part Number STP16N60M2
- Description MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 10.4 mm |
| Qg - Gate Charge | 19 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Type | MDmesh M2 |
| Fall Time | 18.5 ns |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.011640 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 12 A |
| Length | 15.75 mm |
| Rds On - Drain-Source Resistance | 320 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 58 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STP16N60M2 |
| Height | 4.6 mm |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 10.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 9.5 ns |
| Technology | Si |
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