STL13DP10F6
- Manufacturer STMicroelectronics
- Part Number STL13DP10F6
- Description MOSFET Dual P-channel 100 V, 0.136 Ohm typ., 3.3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 double island
- Category MOSFET
Specifications
| Package | PowerFLAT-5x6-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 16.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 4.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 2 Channel |
| Tradename | STripFET |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Id - Continuous Drain Current | 3.3 A |
| Rds On - Drain-Source Resistance | 180 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 24 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STL13DP10F6 |
| Packaging | |
| Typical Turn-On Delay Time | 10.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 4 W |
| Rise Time | 4.8 ns |
| Technology | Si |
Need pricing on STL13DP10F6?
Tell us your quantity and target price. We reply the same business day.