STL10HN65M2
- Manufacturer STMicroelectronics
- Part Number STL10HN65M2
- Description MOSFET
- Category MOSFET
Specifications
| Package | PowerFLAT-5x6-VHV-8 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - |
| Qg - Gate Charge | 11.5 nC |
| Fall Time | - |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | - |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | - |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STL10HN65M2 |
| Typical Turn-On Delay Time | - |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | - |
| Rise Time | - |
| Technology | Si |
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