STI33N60M2
- Manufacturer STMicroelectronics
- Part Number STI33N60M2
- Description MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 45.5 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Fall Time | 9 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.073511 oz |
| Number of Channels | 1 Channel |
| Tradename | MDmesh |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 26 A |
| Rds On - Drain-Source Resistance | 125 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 109 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STI33N60M2 |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 190 W |
| Rise Time | 9.6 ns |
| Technology | Si |
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