STI150N10F7
- Manufacturer STMicroelectronics
- Part Number STI150N10F7
- Description MOSFET N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in I2PAK package
- Category MOSFET
Specifications
| Package | TO-262-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Qg - Gate Charge | 117 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 33 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.073511 oz |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 110 A |
| Rds On - Drain-Source Resistance | 4.2 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 72 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STI150N10F7 |
| Typical Turn-On Delay Time | 33 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 57 ns |
| Technology | Si |
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