STH80N10LF7-2AG
- Manufacturer STMicroelectronics
- Part Number STH80N10LF7-2AG
- Description MOSFET N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package
- Category MOSFET
Specifications
| Package | H2PAK-3 |
| Min. Pack | 1,000 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 28.3 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 21 ns |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Configuration | Single |
| Typical Turn-Off Delay Time | 69.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STH80N10LF7-2AG |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 14.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 33 ns |
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