STH410N4F7-6AG
- Manufacturer STMicroelectronics
- Part Number STH410N4F7-6AG
- Description MOSFET Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-6 package
- Category MOSFET
Specifications
| Package | H2PAK-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 1.1 mOhms |
| Development Kit | - |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 120 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 44.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 200 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 108 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STH410N4F7-6AG |
| Packaging | |
| Typical Turn-On Delay Time | 35 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 365 W |
| Rise Time | 198 ns |
| Technology | Si |
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