STH185N10F3-6
- Manufacturer STMicroelectronics
- Part Number STH185N10F3-6
- Description MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
- Category MOSFET
Specifications
| Package | TO-263-7 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 3.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 10.4 mm |
| Qg - Gate Charge | 114.6 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 6.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.056438 oz |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 180 A |
| Length | 15.8 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 99.9 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STH185N10F3-6 |
| Height | 4.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 25.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 315 W |
| Rise Time | 97.1 ns |
| Technology | Si |
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