STH170N8F7-2
- Manufacturer STMicroelectronics
- Part Number STH170N8F7-2
- Description MOSFET N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
- Category MOSFET
Specifications
| Package | H2PAK-2 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 10.4 mm |
| Qg - Gate Charge | 120 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | STripFET F7 |
| Fall Time | 37 ns |
| Mounting Style | SMD/SMT |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 120 A |
| Length | 15.8 mm |
| Rds On - Drain-Source Resistance | 3.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 79 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | STH170N8F7-2 |
| Height | 4.8 mm |
| Packaging | |
| Typical Turn-On Delay Time | 38 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Rise Time | 53 ns |
| Technology | Si |
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