STH110N10F7-2
- Manufacturer STMicroelectronics
- Part Number STH110N10F7-2
- Description MOSFET N-Ch 100V 6mOhm 110A STripFET VII
- Category MOSFET
Specifications
| Package | H2PAK-2 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 60 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | STripFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 110 A |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | STH110N10F7-2 |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Technology | Si |
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