STGWT20H65FB
- Manufacturer STMicroelectronics
- Part Number STGWT20H65FB
- Description IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
- Category IGBT Transistors
Specifications
| Package | TO-3P |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 250 nA |
| Continuous Collector Current Ic Max | 20 A |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 40 A |
| Product Category | IGBT Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 0.238311 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Series | STGWT20H65FB |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 168 W |
| Technology | Si |
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