STGWA40H120DF2
- Manufacturer STMicroelectronics
- Part Number STGWA40H120DF2
- Description IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 250 nA |
| Continuous Collector Current Ic Max | 80 A |
| Width | 15.75 mm |
| Continuous Collector Current at 25 C | 80 A |
| Product Category | IGBT Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Operating Temperature Range | - 55 C to + 175 C |
| Length | 20.15 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 40 A |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | STGWA40H120DF2 |
| Height | 5.15 mm |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 468 W |
| Technology | Si |
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