STGWA30H65DFB
- Manufacturer STMicroelectronics
- Part Number STGWA30H65DFB
- Description IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Min. Pack | 600 |
| Gate-Emitter Leakage Current | 250 nA |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | STGWA30H65DFB |
| Maximum Operating Temperature | + 175 C |
| Brand | STMicroelectronics |
| Pd - Power Dissipation | 260 W |
| Continuous Collector Current at 25 C | 60 A |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Technology | Si |
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