STGWA25H120F2
- Manufacturer STMicroelectronics
- Part Number STGWA25H120F2
- Description IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
- Category IGBT Transistors
Specifications
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 250 nA |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Product Category | IGBT Transistors |
| Continuous Collector Current | 25 A |
| Subcategory | IGBTs |
| Series | STGWA25H120F2 |
| Maximum Operating Temperature | + 175 C |
| Brand | STMicroelectronics |
| Continuous Collector Current at 25 C | 50 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 375 W |
| Configuration | Single |
| Technology | Si |
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