STGW30NC60VD
- Manufacturer STMicroelectronics
- Part Number STGW30NC60VD
- Description IGBT Transistors PowerMESH
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 100 nA |
| Continuous Collector Current Ic Max | 80 A |
| Width | 5.16 mm |
| Mounting Style | Through Hole |
| Product Category | IGBT Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 1.340411 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 16.03 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 80 A |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | STGW30NC60VD |
| Height | 21.09 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 250 W |
| Technology | Si |
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