STGW30H60DF
- Manufacturer STMicroelectronics
- Part Number STGW30H60DF
- Description IGBT Transistors 600V 30A High Speed Trench Gate IGBT
- Category IGBT Transistors
Specifications
| Package | TO-247 |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 2.4 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | STGW30H60DF |
| Maximum Operating Temperature | + 175 C |
| Brand | STMicroelectronics |
| Pd - Power Dissipation | 260 W |
| Continuous Collector Current at 25 C | 60 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 0.229281 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Gate-Emitter Leakage Current | 250 nA |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
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