STGD5NB120SZT4
- Manufacturer STMicroelectronics
- Part Number STGD5NB120SZT4
- Description IGBT Transistors N-Ch 1200 Volt 5 Amp
- Category IGBT Transistors
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 100 nA |
| Continuous Collector Current Ic Max | 10 A |
| Width | 6.2 mm |
| Mounting Style | SMD/SMT |
| Continuous Collector Current at 25 C | 10 A |
| Product Category | IGBT Transistors |
| Brand | STMicroelectronics |
| Unit Weight | 0.139332 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 6.6 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 5 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | STGD5NB120SZ |
| Height | 2.4 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 55 W |
| Technology | Si |
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